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Abstract
The trapped charge distributions in Al/TiO2/GeOxNy/p-Ge and Al/ TiO2/SiOxNy/strained-Si0.91Ge0.09 structures subjected dynamic stress of different amplitude and frequency in order to analyze the transient response and the degradation of the oxide as a function of different stress condition. The current transients and voltage transient observed in dynamic voltage (-4V to -9V) and current stresses (-2.5mA/cm2 to -12.5mA/cm2) have been interpreted in terms of the charging/discharging of interface and bulk traps. The evolution of the current during unipolar voltage stresses shows the degradation being much faster at low frequencies than at high frequencies.
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