Abstract
The influence of nitrogen incorporated at the gate oxide interface on the reliability and electrical behavior of MOS capacitors was investigated. Incorporation of nitrogen was accomplished either by either rapid thermal oxidation (RTO) in N 2O or N 2O O 2 atmosphere at pressures between 75 to 500 mbar or by implantation of nitrogen at 20 keV and doses between 10 13 to 10 15 cm −2 into the substrate prior to RTO. Characterization of MOS capacitors with oxide thicknesses between 2.9 to 3.9 nm was achieved by reliability measurements at constant current or constant voltage stress, respectively. These measurements were correlated to the nitrogen dose at the gate interface which was determined by SIMS analysis. Stress reliability showed a sensitive dependence on the processing conditions. An accurate adjustment of the nitrogen dose at the gate interface is mandatory to attain improved reliability of nitrided oxides.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
