Reliability of thin dielectric for non-volatile applications

Abstract

With reference to the mainstream flash EEPROM technology, the most relevant failure mechanisms that affect memory reliability are reviewed, showing the primary role played by tunnel oxide defects. The degradation of device performance and single-bit failures induced by program/erase cycling, like the erratic erase phenomenon, are discussed. The impact of stress-induced leakage current on data retention is shown to limit the tunnel oxide scaling.