Abstract
The interest in oxide semiconductor-based thin-film transistors (TFTs) for applications in active matrix displays (AMDs) has generated a large body of experimental and theoretical studies devoted to oxide materials; particularly amorphous-InGaZnO (a-IGZO). For applications in AMDs, reliability and stability of the TFTs used as pixel switching and driving elements are of primary concern. Although the effect of the combined negative gate bias and light stress (NBLS) has been recently investigated in a-IGZO TFTs and found to cause persistent negative threshold-voltage (VTH) shift, ways of completely eliminating this NBLS-induced instability are key to the development of AMDs such as AMLCD and AMOLED displays. The stability issues on oxide TFTs will be reviewed and discussed based on a-IGZO TFTs.
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