Abstract
Fluorinated silicon oxide film prepared by using temperature difference‐based liquid phase deposition is very potential for use as an intermetal dielectric owing to its high fluorine concentration (8.6 atom %), low dielectric constant (3.46), low stress (41 MPa), low leakage current density ( at 2 MV/cm), and low deposition temperature (room temperature). In this work, we closely examine reliability issues including resistance to water absorption and thermal stability by adopting the repeatedly annealing (400°C) and boiling test. After the test, the net increase in the dielectric constant is only 0.02; the stress changes within −24 to 41 MPa with a resultant zero stress; the leakage current density increases slightly to . Obviously the film will preserve its attractive properties in a back‐end process similar to the test. Accompanied with the investigation of p‐etch rate, thermal desorption spectroscopy, and Fourier transform infrared spectroscopy, a feasible mechanism that accounts for the variation of the properties during the test is proposed. A high temperature (>400°C) annealing effect is also studied. The film is thermally stable up to 600°C, which is limited by the decomposition of Si‒F bonds. The thermal stability of 600°C is obviously sufficient for intermetal dielectric application. © 2000 The Electrochemical Society. All rights reserved.
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