Reliability of bottom-gate graphene field-effect transistors prepared by using inductively coupled plasma-chemical vapor deposition

Abstract

Stability degradation in bottom-gate graphene field-effect transistors prepared by using inductively coupled plasma-chemical vapor deposition method are investigated under bias, temperature and illumination stress. The stretched-exponential time dependence model, which can be derived based on the trapping/detrapping of charges to/from existing traps and continuous redistribution of charges in bulk dielectrics, is well applied in fitting the time dependence of the transfer curve shifts in all stress conditions. The stress wavelength is considered as important factors as well as the bias and temperature stress in the transfer characteristic instabilities of graphene FEFs.