Abstract
We evaluate the reliability of a semidamascene BEOL scheme with direct metal etched (DME) Ruthenium and 16 nm wide air gaps (AG). First, we show that Ru can be barrierless independent of the type of deposition (ALD, CVD, PVD) using planar capacitor structures with a metal-etch-based flow. We present TDDB results of semidamascene Ru +AG showing V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> to be above 1.5 V for TTF 0.1% of 3 km long lines at 100°C (using power law model). We show no change in resistance after >1200 h during electromigration tests at 330°C with 5 MA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> stress. We identify increased Joule heating as a reliability concern.
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