Abstract
Despite attractive thermal and electrical characteristics, wide band-gap semiconductor devices such as SiC MOSFET have struggled to penetrate in aircraft applications because of reliability issues in earlier releases. The second and third generation SiC MOSFETs have achieved improved reliability using high quality oxides and innovative fabrication process. This paper presents a failure rate model for SiC MOSFET based on the accelerated test data at a given operating condition. The proposed model enables the system level reliability analysis of second generation SiC MOSFET-based converters. The reliability of SiC two-phase synchronous boost converter has been evaluated at two different operating conditions: 10 and 16 A load condition. To predict the life time of the converter even after a chain of component failures, Markov’s reliability model of the converter is developed. The state transition probabilities and mean time to failure (MTTF) of SiC converter are compared against its Si counterpart which shows that second generation SiC MOSFETs are for aircraft applications with high reliability.
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