Reliability modeling and analysis of flicker noise for pore structure in amorphous chalcogenide-based phase-change memory devices

Abstract

Phase-change memory (PCM) devices are one of the most promising memory devices to replace the flash memory devices in terms of both scalability and performances. However, typically high programming current to operate devices is a fatal problem in comparison with flash memory. Therefore, many studies have been investigated by changing the contact area and optimizing the structure. In addition, in perspective of characteristic of reliability, the drift and noise are the important problem to degrade the characteristic of devices and the flicker noise is one of the crucial factors in amorphous chalcogenide-based PCM devices. In this paper, we examined the pore-like structure, which is one of the promising structures having small reset current, comparing with conventional mushroom structure by the device reliability analysis for flicker noise using TCAD modeling and simulation.