Abstract
In this paper, reliability issues of In2O5Sn (indium–tin oxide: a transparent material) transparent gate recessed channel (TGRC)-MOSFET has been analyzed by considering the effect of interface trap charges (both positive and negative) present at the Si/SiO2 interface. Following device, characteristics are studied in terms of static, linearity, and intermodulation figure of merits. It is found that with the amalgamation of the transparent gate indium tin oxide on conventional recesses channel (CRC) MOSFET, it exhibits improved immunity against interface trap charges in comparison to CRC-MOSFET. In addition, the influence of ambient temperature (150–300 K) along with trap charges on TGRC-MOSFET has also been explored with an aim to analyze at which temperature of the device is more stable in the presence of interface defects (trap charges). Results obtained reveal that TGRC shows improved device performance at low temperature with trap charges being less influenced. Thus, this paper demonstrates that TGRC MOSFET can act as a promising candidate for low-power linear analog applications, where low temperature is required.
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