Abstract
In this letter, performance and reliability of high-k/metal gate MOSFETs can be effectively improved using post metallization annealing. Both oxygen and nitrogen were shown to diffuse into a high-k/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> interfacial layer to suppress the formation of oxygen vacancy, thus reducing the gate leakage current without increasing effective oxide thickness. In particular, with appropriate oxygen annealing, gate-induced drain leakage, drain-current degradation, and gate leakage current variation of high- k/metal gate-last MOSFETs can be efficiently suppressed.
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