Abstract
High- K gate dielectric will be needed when MOS devices are scaled down to the sub-100 nm level. HfO 2 is a promising high- K gate dielectrics candidate to replace SiO 2. In the paper, HfO 2 gate dielectrics films were fabricated by ion beam sputtering a sintered HfO 2 target. Reliability of gate dielectrics was studied. We have studied the SILC (stress-induced leakage current) effect and the TDDB (time-dependent dielectric breakdown) characteristic. Soft breakdown behavior was observed under constant current and voltage stress. Results indicate HfO 2 holds good reliability for gate dielectrics.
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