Abstract
The reliability results for barrier/liner systems in different high aspect ratio (5×50μm) through silicon vias (TSV) are presented. Quite a few factors can influence the TSV barrier/liner reliability performance, including the TSV trench etch process, the oxide liner material/thickness, etc. The challenges for more advanced TSV technology nodes (e.g. 3×40μm) are also discussed and possible solutions are proposed.
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