Abstract
The reliability of GaAs-based magnetic sensors developed for power metering has been investigated. The sensing device, which comprises a pseudomorphic quantum well, operates using the Hall effect principle. Accelerated aging tests were performed at wafer level, yielding outstanding results for lifetime and Mean Time To Failure. Packaged devices passed successfully a set of MIL-STD202-based tests. Aging tests of power meters confirmed the excellent behavior of the devices. This, along with their remarkable metrological properties, makes this device a unique component for high-precision electricity metering, compatible with large scale production.
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