Abstract
We have optimized the MBE growth conditions of InGaAs/GaAs pseudomorphic structures in order to obtain narrow emission linewidths and high quantum efficiencies. The thermal stability of the strained layers is studied using annealing at T⩽930 °C. From the evaluation of the luminescence spectra after 30 min annealing we estimate an In/Ga interdiffusion length of about 2 nm at 900° C.
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