Reliability and performance improvement of InGaZnO thin film transistors with organosilicon passivation layers

Abstract

In this paper, we report an InGaZnO thin film transistor with organosilicon passivation layer (PVL) which can effectively improve the reliability and performance of the InGaZnO thin film transistor due to its excellent gas barrier property and the hydrogen doping effect of PVL. The TFT with organosilicon PVL exhibits a boosted performance with mobility of 17.78 cm2/v·s, threshold voltage of 2.78 V, subthreshold swing of 0.41 V/decade and Ion/Ioff of 1.37 × 107. Moreover, the proposed PVL for InGaZnO thin film transistor shows a small threshold shift of 0.89 V and −1.14 V for positive bias stress and negative bias stress condition, respectively.