Abstract
We investigated the reliability of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) fabricated by an ultra low-temperature process below 200 °C. Their comparatively high reliability was confirmed. It was found by emission observation that hot carriers were hardly generated under the drain avalanche condition. The Joule heating effect was also hardly observed under DC stress at high drain and gate voltage stress. These results show that the hot carrier and Joule heating effects are not the predominant causes of the degradation of ultra low-temperature TFTs. The new degradation mode of the threshold voltage shift by a vertical electric field was found to be dominant in ultra low-temperature TFT.
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