Abstract
This paper report on the long-term stress (1000 h) carried out on AlGaN/GaN HEMTs processed on composite SopSiC substrate. Almost all tested devices present good device stability and promising performance. The reliability issues identified during the work are clearly related to the high levels of gate leakage current. All these results are very encouraging and confirm that the composite substrates are very promising for low-cost and high performance AlGaN/GaN HEMT for RF power applications.
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