Abstract
Solid-state refrigeration thin films with large positive and/or negative electrocaloric (EC) effect in a wide working temperature range are expected in the next-generation solid-state cooling devices. We demonstrated that the negative EC effect (ΔTmax ~ − 0.80 K, FWHMΔT ~ 136 K) of the Mn-doped BaTiO3 (Mn-BTO) thin film can be significantly improved (ΔTmax ~ − 2.94 K, FWHMΔT ~ 186 K) by constructing the nano-scaled rhombohedral phases via the SiN/p-GaN composite substrate instead of the Pt(111)/TiOx/SiO2/Si(100) substrate. The great improvement is attributed to the electric-field induced structure-phase-transition between the nano-scaled rhombohedral and tetragonal phases. It is believed that constructing SiN/p-GaN composite substrate is an effective strategy for thin film with high negative-EC performance in a wide working temperature range.
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