Relevance of phosphorus incorporation and hydrogen removal for Si:P δ‐doped layers fabricated using phosphine

Abstract

AbstractWe present a study to determine the importance of phosphorus incorporation and hydrogen removal for the electrical activation of phosphorus dopants in Si:P δ‐doped samples fabricated using phosphine dosing and molecular beam epitaxy (MBE). The carrier densities in these samples were determined from Hall effect measurements at 4 K sample temperature. An anneal to incorporate phosphorus atoms into substitutional lattice sites is critical to achieving full dopant activation after Si encapsulation by MBE. Whilst the presence of hydrogen can degrade the quality of the Si encapsulation layer, we show that it does not adversely impact the electrical activation of the phosphorus dopants. We discuss the relevance of our results to the fabrication of nano‐scale Si:P devices. (© 2005 WILEY‐VCH Verlag GmbH & C o. KGaA, Weinheim)