Abstract
Deep level transient spectroscopy (DLTS) is among the main methods used to determine the parameters of electrically active centers of charge localization in semiconductors. In order to increase the accuracy and adequacy of DLTS data, we propose a modified approach based on the application of an inverse Laplace transform. Using the proposed Laplace-DLTS method, it is possible to determine the parameters of centers with close carrier emission coefficients, which cannot be done using the traditional DLTS technique.
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