Abstract
Comparison of prolonged relaxation processes induced by ionizing radiation (IR) and pulsed magnetic field treating (PMFT) in p-channel MOSFET elements of integral circuits as well as in the concomitant test MOS-capacitors has been carried out for the first time. Time dependent changes of oxide charge density and interface states energy distribution after the end of X-ray (20 keV, 5 × 10 4 rad (Si)) were investigated. The unusual result is the appearance of considerable changes of MOS system's characteristics only several days after PMFT with the amplitude 0.3 MA m −1. It was discovered that PMFT caused the considerable unmonotonous changes of shallow donor concentration and generation lifetime in silicon. The PMFT induced the impurity and intrinsic defect reaction in silicon contrary to the defect generation in the oxide and SiSiO 2 interface by the IR.
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