Abstract
Relaxation oscillations produced by impact ionization within high-field domains were studied in epitaxial n-type gallium arsenide at room temperature and at 77°K. A study was also made of the behaviour at room temperature of excess carriers produced by hole-injection at the anode. From these measurements the majority and minority carrier lifetimes were obtained. Results from both vapour-grown and solution-grown epitaxial layers are presented. The lifetimes for these two types of material were found to be not very different. In some layers appreciable numbers of centres acting as hole traps (∼ 10 14−10 15 cm −3) were found.
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