Abstract
Anisotropic domain tilting of GaN films prepared by hydride vapor phase epitaxy (HVPE) on GaN/sapphire (0 0 0 1) substrate employing lateral epitaxial overgrowth (LEO) method has been investigated using high-resolution X-ray diffraction. Anisotropic domain tilting resulted in anisotropic broadening of GaN (0 0 0 2) Bragg peak and anisotropicity was fitted using a model based on anisotropic mosaic spreading. Anisotropicity of domain tilting, which was thought to be induced by stress gradient in the transition area between prepatterned SiO 2 stripes and window region, relaxed with an increasing film thickness, but was still observed to exist up to a film thickness of 40 μm.
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