Abstract
High-quality thick GaN film of 320 um thickness was grown on low-temperature HVPE-GaN/c-Al2O3 template by hydride vapor phase epitaxy (HVPE) after radio frequency (RF) magnetron sputtering (MS) ZnO buffer layer was deposited on the template. The void areas in the interface between three-dimension island of ZnO buffer and thick GaN film helpful to the formation of lateral epitaxial overgrowth (LEO) of GaN layer when V/III rate of HVPE is adjusted. The crystal properties of thick GaN film were detected by double crystal X-ray diffraction (DCXRD), atomic force microscopy (AFM) and scanning electron microscope (SEM). As a result, the full width at half maximum (FWHM) of GaN(0002) double crystal x-ray diffraction rocking curve is 336.15 arcsec and the threading dislocation density (TDD) estimates about 10^7cm-², which indicated that the quality of crystal is as high as suitable for free-Standing GaN substrate.
Published Version
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