Abstract
We have studied the relaxation of electrical properties in radiation-damaged layers formed during ion-beam milling (IBM) of cadmium mercury telluride (CdHgTe) solid solutions. It is established that the initial concentration of donor centers formed due to radiation-induced defects and the dynamics of their decomposition in the course of aging (relaxation) are determined by the composition of the solid solution. The mobility of charge carriers in radiation-damaged CdHgTe layers upon relaxation also depends on the solid solution composition.
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