Abstract

The discovery of two-dimensional (2D) magnetic van der Waals (vdW) materials has flourished an endeavor for fundamental problems as well as potential applications in computing, sensing and storage technologies. Of particular interest are antiferromagnets, which due to their intrinsic exchange coupling show several advantages in relation to ferromagnets such as robustness against external magnetic perturbations. Here we show that, despite of this cornerstone, the magnetic domains of recently discovered 2D vdW MnPS3 antiferromagnet can be controlled via magnetic fields and electric currents. We achieve ultrafast domain-wall dynamics with velocities up to ~3000 m s−1 within a relativistic kinematic. Lorentz contraction and emission of spin-waves in the terahertz gap are observed with dependence on the edge termination of the layers. Our results indicate that the implementation of 2D antiferromagnets in real applications can be further controlled through edge engineering which sets functional characteristics for ultrathin device platforms with relativistic features.

Highlights

  • The emergence of magnetism in 2D van der Waals (vdW) materials has opened exciting avenues in the exploration of spin-based applications at the ultimate level of few-atom-thick layers

  • Spin dynamics on monolayer MnPS3 We firstly investigate how magnetic domains are formed in monolayer MnPS3 through simulating the zero-field-cooling process for a large square flake of 0.3 μm × 0.3 μm using atomistic spin dynamics which incorporate micro-scale and macro-scale underlying details

  • The time evolution of the easy-axis component of the magnetization Sz is used to display the nucleation of the magnetic domains at different temperatures and magnetic fields

Read more

Summary

Introduction

The emergence of magnetism in 2D vdW materials has opened exciting avenues in the exploration of spin-based applications at the ultimate level of few-atom-thick layers. Remarkable properties including giant tunneling magnetoresistance[1,2,3] and layer stacking dependent magnetic phase[4,5] have recently been demonstrated Even though these studies show that rich physical phenomena can be observed in 2D ferromagnets[6,7,8,9], the dynamics of domain walls which determine whether such compounds can be effectively implemented in real-life device platforms remains elusive. Recent measurements using tunneling magnetoresistance, a common approach for ferromagnetic materials, unveiled that antiferromagnetic correlations persist down to the level of individual monolayers of MnPS314 This result suggests that yet unexplored ingredients at low-dimensionality play an important role in the detection and manipulation of the antiferromagnetic order in 2D vdW compounds. How domain walls in MnPS3 behave and can be controlled externally in functional devices for practical applications are still open questions

Methods
Results
Conclusion
Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.