Abstract
Relations between the concentrations of neutral (N0) and charged (N+) single-substitutional nitrogen and of nitrogen–vacancy (N–V) complexes in chemical vapour deposited diamond films of ≈︂0.2 mm thickness with nitrogen impurity concentration levels of 10 ppm are studied. For this purpose the films were subjected to 8 MeV electron irradiation at room temperature and subsequent annealing at 800 °C. The samples were analysed by micro-photoluminescence, visible and IR absorption, and Electron Spin Resonance techniques. It was found that the concentration of nitrogen in the (N–V) and N+ forms, in as-grown films, is less than 0.1% and 10% of the neutral substitutional nitrogen N0, respectively.
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