Abstract
Paramagnetic defects in CVD (Chemical Vapor Deposition) diamond films were studied using the Electron Spin Resonance ( ESR) method. Furthermore, the correlation between defects and electrical resistance of conductive layers on CVD the diamond surface were investigated using ESR and van der Pauw methods, An ESR center with g=2.003, Δ H PP=8 Oe, which is identical to the carbon dangling bonds in non-diamond phase carbon, is highly distributed with a spin density of 10 20 spinscm −3 in the conductive surface layer. When thermal treatment was carried out in an oxygen atmosphere at 600 °C, the ESR center was removed and then the electrical resistance was at least 10 4 times greater than that of as-grown diamond films.
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