Year-end Sale % OFF 
Abstract
A lack of unclamped inductive switching (UIS) withstanding capability of high-voltage GaN-HEMTs is a critical disadvantage for them. It is caused by poor removability of holes, which are generated by the avalanche breakdown. This paper shows the relations between the UIS withstanding capability and the static I-V characteristics are discussed to clarify the bottle neck factor for hole removal. From the UIS withstanding capability depending on the gate-leakage current, the crystal defect density around the gate would influence the withstanding capability.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
