Abstract
In the present study the advantageous pulsed-injection metal organic chemical vapour deposition (PI-MOCVD) technique was used for the growth of nanostructured La1−xSrxMnyO3±δ (LSMO) films on ceramic Al2O3 substrates. The compositional, structural and magnetoresistive properties of the nanostructured manganite were changed by variation of the processing conditions: precursor solution concentration, supply frequency and number of supply sources during the PI-MOCVD growth process. The results showed that the thick (≈400 nm) nanostructured LSMO films, grown using an additional supply source of precursor solution in an exponentially decreasing manner, exhibit the highest magnetoresistance and the lowest magnetoresistance anisotropy. The possibility to use these films for the development of magnetic field sensors operating at room temperature is discussed.
Highlights
Perovskite manganite materials are an interesting topic of research since they can be applied as sensors for measuring the magnetic field due to the colossal magnetoresistance (CMR) phenomenon [1]
The grazing incidence X-ray diffraction (GIXRD) measurements presented in Figure 2e show no secondary phases, only the characteristic peaks associated with the Al2O3 substrate and polycrystalline LSMO films with a perovskite-like crystal structure with rhombohedral distortions for both deposition series
The nanostructured LSMO films were grown by PI-MOCVD in two different technological ways enabling the control of the microstructure and magnetoresistive properties of the films
Summary
Perovskite manganite materials are an interesting topic of research since they can be applied as sensors for measuring the magnetic field due to the colossal magnetoresistance (CMR) phenomenon [1]. It was shown that the change of nanostructure by variation of deposition temperature influences the magnetic properties of the films [17]. The increase of the deposition rate results in changes in the crystallite dimensions, leading to a higher number of nucleation sites [18].
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