Relation between the leakage currents and the defects created in the oxide and at the interface in a short channel NMOS transistor

Abstract

The problems associated with the defects in a MOS transistor become significant with increase of integration scale. These problems entail a degradation of the integrated circuit reliability, reduction of their lifetime and can be repeated on the transistor ageing. The defects can be translated by leakage currents such as substrate current I sub and gate current I g. The aim of this work is the modelling of these currents in relation to defects located at the interface and in the oxide which are simulated by uniform distribution of charges.