Abstract
The relation between the flux of energetic oxygen ions and the sputtered metal atoms in ZnO film deposition by reactive sputtering was investigated. Both the energetic oxygen flux and the degree of oxidation on Zn target increased with increasing oxygen partial pressure in Ar/O 2 gas. There is a close relation between the flux of energetic oxygen ions and the sputtered Zn atoms in the reactive sputtering of Zn target in Ar/O 2 gas. Experimental data for the oxygen partial pressure dependencies of the flux of energetic oxygen particles and the sputtered Zn atoms are in good agreement with the relations which were deduced from a simple model of oxidization for the Zn target surface that the number of oxidized islands is proportional to oxygen partial pressure and the increasing rate of ZnO island area is proportional to the oxygen flux arriving onto the island.
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