One platform for all researcher needs
AI-powered academic writing assistant
Your #1 AI companion for literature search
AI tool for graphics, illustrations, and artwork
Unlock unlimited use of all AI tools with the Editage Plus membership.
Explore Editage Plus
Audio Papers
Ask R Discovery
Translation
Auto-sync
Collaboration
https://doi.org/10.1016/s0167-9317(00)00514-1
Copy DOI
Export
Save
Share
Cite Journal: Microelectronic Engineering |  Publication Date: Apr 17, 2001 |
 Citations: 2 |
Affiliation: Osaka Prefecture University
The relation between the growth rate and temperature gradient in the Si crystal is examined using the reliable measurement data and heat balance equation at the interface. The temperature gradient in the crystal is found to be linearly increased with the increase of the growth rate.
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
