Abstract
Abstract The electrical properties and the elemental composition of as-grown CuInSe2 single crystals are measured and compared with the predictions of an intrinsic defect chemistry model. It is found that the validity range of the intrinsic defect model is limited to small deviations from the ideal stoichiometry of the compound. The critical values for the deviations from molecularity and valence stoichiometry are given. Preliminary results are reported on changes of composition and electrical parameters during annealing.
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