Abstract
We present the molecular beam epidaxy (MBE) growth and the dc device performance of the first fully epitaxial regrown-emitter InP heterojunction bipolar transistors (HBTs). Here the emitter layers are regrown by MBE onto a patterned base–collector template. This process is aimed at reducing the emitter resistance, a key parameter for scaling high speed logic circuits. Emitter resistance is reduced because the emitter contact is formed to an extrinsic emitter larger than the base–emitter junction. Scanning electron microscope images demonstrate controlled, uniform etching to the intrinsic base layer, high-quality epitaxial MBE growth onto the patterned surface, and good sidewall coverage. HBTs with base-emitter junctions ranging from 48×48 to 2.5×2.5μm2 have maximum dc current gains between 5.0 and 7.5. Comparison to regular HBTs shows that the dc current gains are limited by excess base currents. Possible contributions to the excess base currents are discussed. Transmission line method measurements show t...
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
