Abstract
Chemically amplified resists have been used in the EUV lithography. The basic additive, called a quencher, has been added to the resist formula to control acid diffusion. In this study, the effects of photodecomposable quencher (PDQ) concentration on the chemical gradient (an indicator for LER) in chemically amplified EUV resist processes were investigated. The chemical gradients were simulated on the basis of the sensitization and reaction mechanisms for different half-pitchs, sensitivities, photoacid generator (PAG) concentrations, PDQ concentrations, and the effective reaction radii for deprotection. The simulation results analyzed using least square, lasso, Ridge, and elastic net regressions are discussed.
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