Abstract
In the development of highly resolving and highly sensitive resist materials, stochastic phenomena (LER and stochastic defect generation) are a critical issue. In this study, the dependences of chemical gradient (an indicator of LER) on the half-pitch of line-and-space patterns, the thermalization distance of secondary electrons, EUV optical contrast, the photoacid generator (PAG) concentration, the photodecomposable quencher (PDQ) concentration, and the effective reaction radius for deprotection were investigated using a simulation on the basis of the sensitization and reaction mechanisms of chemically amplified EUV resists. The relationships between resolution, LER, and sensitivity were formulated in terms of thermalization distance.
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