Abstract
The results are presented of a numerical simulation of the spatial-temporal dynamics of a semiconductor interferometer with competing carrier-density and thermal mechanisms of nonlinear dispersion and absorption rising with temperature. Single traveling pulses and static inhomogeneous structures (layers), which arise due to diffusion of kinetic variables and represent the novel type of transverse effects in optical bistability, are numerically found. The investigated phenomena are: selfformation of layers on the background of regenerative oscillations; excitation and propagation of traveling pulses under plane wave interferometer pumping; spontaneous emergence of traveling pulses under gaussian pumping, as well as new homogeneous regimes: regenerative oscillations around various equilibrium states and switchings between corresponding limit cycles, generation of single pulses in response to small external signals (regime of a single-shot optical multivibrator) and nontrivial transient processes in the course of switching.
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