Refractory MoSi2and MoSi2/polysilicon bulk CMOS Circuits

Abstract

Refractory MoSi 2 and MoSi 2 /polysilicon have been used to fabricate high-performance 3µm bulk CMOS circuits. Thirty-nine stage ring oscillators, with a fan-in and fan-out of 1, exhibit a switching delay/stage of 1.2 to 1.4ns, and a power-delay product of 0.22 to 0.25pJ at a supply voltage of 5V. The power-delay product ranges from 40fJ for a delay of 9ns to 1pJ for a delay of 0.6ns. Self-checking pattern generator circuits implemented with the same technology show an operating frequency as high as 80 MHz, which corresponds to approximate in-circuit delays of 1.2ns/stage.