Abstract
A thin film of the ternary Ga10Ge10Te80 compound has been deposited at room temperature on a Corning 7059 glass substrate by the e-beam evaporation technique at vacuum pressure ∼1.8 × 10−3 Pa. X-ray diffraction studies revealed that the as-deposited films and those annealed up to 400 K have an amorphous phase, while those annealed at 450 K are crystalline. The elemental chemical composition of the as-deposited films was confirmed using energy dispersive x-ray analysis. The transmission and reflection spectra of the as-deposited and annealed films at annealing temperature 450 K were recorded at normal light incidence in the wavelength range 600–2500 nm. The refractive index and optical band gap have been calculated for the investigated films. The dispersion parameters, (Eo, Ed), static refractive index, ns(0), static dielectric constant, εs, and the carrier concentration to the effective mass ratio, N/m*, have been calculated. An analysis of the optical absorption spectra revealed an indirect optical transition characterizing the as-deposited films while direct and indirect optical transitions characterized the films annealed at 450 K.
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