Abstract
Reflow of phosphosilicate glass (PSG) using the short‐duration rapid thermal annealing technique at temperatures ranging between 1000° and 1300°C is reported. Excellent control of the reflow has been obtained. Heating times required for reflow decrease rapidly with increased temperature. Addition of to the anneal ambient reduces the lag time to reflow and also induces greater flow. Dopant redistribution in the underlying silicon during PSG reflow was measured. Results correlating the phosphorus mole percent, anneal temperature, and the anneal ambient to the overall reflow characteristics of the PSG are presented.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
