Abstract
The capacitance-voltage ( C-V) characteristics of metal-oxide-silicon (MOS) capacitors passivated by BeF 2-B 2O 3-GeO 2-SiO 2 glasses with various water and fluoride contents were investigated. As the OH − absorption coefficient of the glass increased, adverse effects on the recovery of hysteresis loops of C-V curve shifts were observed. The water content is closely related to the fluoride content in the BeF 2-B 2O 3-GeO 2-SiO 2 glass. The viscous flow point of the glass was lowered with increasing degree of ionic character obtained from Hannay's equation. The normal C-V curve shift was observed for the MOS capacitors passivated with the glass with 25% BeF 2.
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