Reflectivity measurements of thin SiO2 layers in the soft‐X‐ray region

Abstract

AbstractEnergy and angular dependent reflectivity measurements of differently prepared SiO2 layers were made in the soft X‐ray region in order to study differences in their optical and electronic behaviour caused by the technological process. The optical constants of the layers were determined by fitting the angular dependent reflectivity data with a multilayer model which takes into account the roughness of all interfaces. Detailed knowledge of the polarization level of the primary beam from the synchrotron radiation source is needed for reliable results. The energy dependent reflectivity measurements indicate that high‐pressure dry‐oxidized layers have a more perfect structure than normal dry‐oxidized layers. Independent on the deposition process the SiSiO2 interface roughness amounts to ± 1 nm. The Si2p‐XANES of Si and SiO2 were detected.