Reflectivity measurements of thin SiO 2 layers in the far VUV region

Abstract

Energy and angular dependent reflectivity measurements were made in the far VUV region for differently prepared SiO 2 layers in order to study differences in their optical and electronic behaviour caused by the technological process. The optical constants of the layers were determined by fitting the angular dependent reflectivity data with a multilayer model which takes into account the roughness of all interfaces. Detailed knowledge of the polarization level of the primary beam from the synchrotron radiation source is needed for reliable results. The energy dependent reflectivity measurements indicate that high-pressure dry-oxidised layers have a more perfect structure than normal-pressure dry-oxidised layers. Independent of the deposition process the SiSiO 2 interface roughness amounts to ±1 nm.