Abstract
The growth of metallic silver films by aerosol-assisted chemical vapor deposition at atmospheric pressure for use as thin film electrodes or reflective layers in optoelectronic stacks has been studied using the self-metallization of silver(I) trifluoromethanesulfonate (silver(I) triflate, [Ag(SO3CF3)]) during chemical vapor deposition under nitrogen, air, and 5% H2/N2. The deposition behavior of the triflate from a methanolic solution was observed with respect to film thickness between 170 and 240 nm, while the dependence of electrical resistivity between ρ = 2.8 × 10° and 5.0 × 10–5 Ω cm on nanocrystallite diameter between 38 and 44 nm indicated a grain boundary-limited charge carrier propagation mechanism arising from insular film growth. Furthermore, increased nanocrystallite size reduced specular optical reflectance from 11 to 3%. The thermal stability of silver(I) triflate as compared with other silver precursors enabled deposition at elevated temperatures with maximum growth rates of 11 nm min–1, re...
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