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Abstract
The initial stages of TiN crystal growth on Si substrates in the dynamic mixing method were investigated by reflection high-energy electron diffraction (RHEED) in a newly constructed ultrahigh-vacuum apparatus. The Si (001) RHEED pattern disappeared immediately after dynamic ion beam mixing started, and then was replaced by the halo pattern representing amorphous structures. The halo gradually changed to Debye-Scherrer rings representing Ti polycrystal. The results for Si (001) and (111) substrates have confirmed that the TiN crystal is controlled by the arrival ratio, Ti/N. The present RHEED pattern study has, for the first time, revealed an observable influence of the crystallography of Si substrates on TiN crystal growth.
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