Abstract
Recent reflection electron microscopy (REM) studies of thin film growth on Si surfaces are reviewed with some new results presented. Reflection high energy electron diffraction intensity oscillations during molecular beam epitaxy were imaged by REM in the case of Si growth on Si(111). The anisotropy of Si(001)2 × 1 surfaces and its effects on the growth of Si were studied. Si and Ge growths on Au-deposited Si(111) surfaces were observed for studies of atomic processes in surfactant-mediated epitaxial growth.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
