Abstract

Antimony chalcogenide thin film solar cells have been considered promising candidates in the field of photovoltaics, because of their suitable physical and chemical properties. However, the reported experimental record efficiency is far from the corresponding theoretical value. Multiple works have been directed to increase the efficiency of these devices; however, to the best of our knowledge, studies related to losses due to the reflection of the incident radiation in conjunction with the effects of the lattice mismatch of the constituent layers of the solar cells in the formation of interfacial states have not been addressed. Considering these aspects, this work presents a study of reflection losses caused by the layers of materials typically used for processing of solar cells based on Sb2Se3 and a description of the influence of lattice mismatch in the formation of interfacial states, evaluating the impact of both aspects on the efficiency.

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