Abstract
Gate oxide damage from effect and a method to reduce it are described. The electron shading effect is one of the dominant mechanisms of charging damage in via etching and dense-line pattern etching. The damage strength showed a positive correlation with the electron temperature in the plasma. To reduce this kind of h%ge, we synchroNzed the rf bias with a pulse modulation of an ICP source. We obtained the most significant reduction effect by utilizing the coolest electrons at the end of the off period with the rf bias synchronized at that phase. The phase effect was also observed as a reduced damaging current with a new probe structure and a special external circuit.
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